Ultra Fast Dynamic RDS(ON)

Characterization system for GaN-devices

The Ultra Fast Dynamic RDS(on) test is designed for characterization of GaN transistors.

A critical requirement in power electronics is obtaining a very low ON resistance (RON) immediately after switching from a high-voltage OFF state to a low-voltage ON state.

 

The Ultra Fast Dynamic RDS(on) test is able to measure the RDS(on) immediately after switching between OFF state and ON state. The first RDS(on) value is generated after approx. 100 μs.

 

The system is designed for currents up to 100 A (pulsed) or voltages up to 1 kV. Due to the special design of the probecard it is possible to measure further parameters (leakage, and others).

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Features & Benefits

  • Off-state 1 kV
  • On-state 100 A
  • 100 ns sampling time resolution
  • Integrated wafer test solution for
  • MPI TS2000-HP & TS3000-HP

 

  • Active probe card
  • Gate pulse length 1-100 μs
  • Unipolar n-channel or p-channel
  • Output characteristic
  • Transfer characteristic
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