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Device Characterization for Modeling and Process Development
Semiconductor device modeling creates models for analyzing the behavior of the discrete, elementary devices (transistors, inductors, diodes, etc.) based on fundamental physics, geometry, design and operation conditions. One of the important steps is to perform electrical on-wafer measurements of such devices which is known as Device Characterization. Driven by the emergence of new device technologies, new materials, process developments and integration, the Device Characterization process faces increasing challenges in electrical test for more and more sophisticated devices.
Basic device characterization and modeling requires accurate I-V/C-V, RF, load pull and noise measurement of devices under temperature in an EMI-shielded test environment. Engineers are facing challenges such as repeatability of the measurement, reliable probe contact, external noise influences, low leakage performance of the probes and chucks, thermal performance of the system and correct electrical connections between the device and various instruments.
MPI Engineering Probe Systems are designed to provide accurate measurement results for maximum confidence with dedicated accessories such as coaxial, Kelvin, triaxial measurement connections, thermal chucks with leakage performance down to fA level with a temperature range from -60 to 300 °C and superior thermal distribution, EMI-shielded and light-tight test environment. The MPI TS200-SE wafer probe system is suitable for performing accurate Device Characterization.
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